qw -bb049 page 1 rev :a electrical characteristics (at t a =25c unless otherwise noted) ratings at 25c ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load derate current by 20%. notes: 1. 2.0us pulse width, f=1.0 khz. 2. pulse test: 300us pulse width, 1% duty cycle. reverse v oltage: 100 to 200 v forward current: 20 a rohs device MBR20H100FCT -g thru. mbr20h200fct -g d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) i t o - 2 2 0 a b comchip t echnology co., l td. 0. 11 8( 3. 00 ) 0. 10 6( 2. 70 ) 0. 17 3( 4. 40 ) 0. 18 9( 4. 80 ) 0. 53 1( 13 .5 0) 0. 57 1( 14 .5 0) 0. 61 0( 15 .5 0) 0. 57 1( 14 .5 0) 0. 10 2( 2. 60 ) 0. 11 8( 3. 00 ) 0. 13 8( 3. 50 ) 0. 12 2( 3. 10 ) 0. 38 6( 9 .8 0) 0. 40 6( 10 .3 0) 0. 03 0( 0. 76 ) 0. 02 0( 0. 51 ) 0 . 0 5 9 ( 1 . 5 0 ) 0 . 0 3 0 ( 0 . 7 6 ) 0 . 0 2 0 ( 0 . 5 1 ) 0 . 1 1 2 ( 2 . 8 4 ) 0 . 0 8 8 ( 2 . 2 4 ) pa ra m et er sy mb ol un it maximum recurrent peak reverse v oltage maximum rms v oltage maximum dc blocking v oltage maximum a verage forward rectified current @ tc=125c peak forward surage current , 8.3ms single half sine-w ave super imposed on rated load(jedec method) operating junction t emperature range storage t emperature range 100 70 100 v rrm v rms v dc i (a v) i fsm v f i r t j t stg 150 -65 to +175 -65 to +175 v v v a a v ma 150 105 150 200 14 200 20.0 mbr 20h100fc-g mbr 20h150fct -g mbr 20h200fct -g maximum instantaneous forward voltage at: (note 2) if=10a@ t j = 25c if=10a@ t j =125c if=20a@ t j = 25c if=20a@ t j =125c 0.85 0.75 0.95 0.85 0.88 0.75 0.97 0.85 5 2 v oltage rate kf change (rated v r ) dv/dt 10000 v/us maximum t ypical thermal resistance (note3) r jc 1.50 c/w c c 3. thermal resistsnce from junction to case per leg,mount on heatsink sixe of 2in*3in*0.25in al-plate. s c h o t t k y b a r r i e r r e c t i f i e r s features -plastic material used carries underwriters laboratory mechanical data -guard ring for transient protection. -low power loss high ef ficiency . -mounting position: any -case: jedec it o-220ab, molded plastic body . -w eight: 2.24 grams - low forward voltage drop. high current capability , -high surge capacity . -for use in power supply-output rectification, power management, instrumentation. -polarity: as marked c o m c h i p s m d d i o d e s s p e c i a l i s t 0. 11 4( 2. 90 ) 0. 09 8( 2. 50 ) 0 . 0 4 3 ( 1 . 1 0 ) 0 . 0 7 1 ( 1 . 8 0 ) 0 . 0 5 5 ( 1 . 4 0 ) 0 . 1 5 7 ( 4 . 0 0 ) 0 . 1 4 2 ( 3 . 6 0 ) -guarding for overvoltage protection. -high temperature soldering guaranteed: 260c/10 seconds,0.25(6.35mm) from case. -t erminals: pure tin plated, lead free.solderable per mil-std-750,method 2026 -mounting torque: 5in. -1bs.max i frm peak repetitive forward current (rated vr, square wave,20khz) at t c =125 c a 20.0 forward voltage at: maximum instantaneous reverse current @ t c= 25c at rate dc blocking voltage @ t c= 125c at (note 2) a peak repetitive reverse surge current (note 1) i rrm 1.0 0.5 a laboratory classifications 94v -0.
ra ting and characteristic cur ves (MBR20H100FCT -g thru. mbr20h200fct -g) qw -bb049 comchip t echnology co., l td. fi g. 2- m ax im um no n- re pe ti ti ve s ur ge c ur re nt p e a k f o r w a r d s u r g e c u r r e n t , ( a ) 1 12 5 10 0 75 50 25 0 15 0 10 2 5 20 50 10 0 i n s t a n t a n e o u s r e v e r s e c u r r e n t , ( m a ) f i g . 4 - t y p ic a l r e v e r c h a r a c t e r is t ic s r e r c e n t o f r a te d p e a k r e v e r s e v o lt a g e , ( % ) j u n c t i o n c a p a c i t a n c e , ( p f ) fi g. 5- t yp ic al j un ct io n ca pa ci ta nc e 10 00 0 10 00 10 0 f i g . 1 - f o r w a r d c u r r e n t d e r a t i n g c u r v e s c h o t t k y b a r r i e r r e c t i f i e r s ca se t em pe ra tu re , ( c) nu mb er o f cy cle s at 6 0h z reverse v oltage, (v) 1 10 100 0.1 t j = 2 5 c f = 1 m h z 1 5 . 0 1 0 . 0 5 . 0 2 0 . 0 0 25 1 0 0 5 0 7 5 1 2 5 1 5 0 2 0 0 0 2 5 . 0 in d u c t iv e o r r e s is t iv e l o a d pulse width 8.3ms single half-sine-w ave (jedec method) page 2 rev :a a v e r a g e f o r w a r d c u r r e n t , ( a ) 1 7 5 f i g . 3 - t y p i c a l i n s t a n t a n e o u s f o r w a r d i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) in s ta n ta n e o u s f o r w a r d v o lt a g e , ( v ) 0 . 6 0 . 5 0 . 3 0 . 1 0 . 0 1 0 . 1 1 5 0 1 . 0 0 . 8 0 . 2 0 . 4 0 . 7 0 . 9 1 0 0 t j = 1 2 5 c t j = 2 5 c pu lse w i dt h 300us 1% du ty cy cl e c h a r a c t e r i s t i c s 0 . 0 0 0 1 0 0 . 0 1 1 0 0 8 0 0 . 1 1 4 0 1 0 6 0 0 . 0 0 1 t j = 1 2 5 c t j = 7 5 c t j = 2 5 c 2 0 v s i g = 5 0 m v p - p 1 0 . 1 0 . 0 1 0 . 1 1 1 0 1 0 0 1 0 0 1 0 fi g. 6- t yp ic al t ra ns ie nt t he rm al i mp ed an ce t , pulse dura tion , (sec) t r a n s i e n t t h e r m a l i m p e d a n c e , ( o c / w )
qw -bb049 comchip t echnology co., l td. s c h o t t k y b a r r i e r r e c t i f i e r s page 3 rev :a marking code xxx = product type marking code c = compchip logo MBR20H100FCT part number marking code mbr20h150fct mbr20h200fct MBR20H100FCT mbr20h150fct mbr20h200fct c mbr20hxxxfct standard packaging c a s e t y p e i t o - 2 2 0 a b 5 0 t u b e ( p c s ) t u b e p a c k 8 , 0 0 0 b o x ( p c s )
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